DocumentCode
3555017
Title
An ultra high speed GaAs CCD
Author
Deyhimy, I. ; Harris, J.S., Jr. ; Eden, R.C. ; Anderson, R.J. ; Edwall, D.D.
Author_Institution
Rockwell International Electronics Research Center, Thousand Oaks, California
Volume
25
fYear
1979
fDate
1979
Firstpage
619
Lastpage
621
Abstract
An ultra high speed buried channel Schottky barrier gate GaAs CCD is described which has been operated up to a clock frequency of 500 MHz. The transit time limited upper clock frequency is predicted to exceed 5 GHz.
Keywords
Bandwidth; Charge coupled devices; Clocks; Frequency; Gallium arsenide; Geometry; Power dissipation; Schottky barriers; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1979 Internationa
Type
conf
DOI
10.1109/IEDM.1979.189700
Filename
1480565
Link To Document