Title :
An ultra high speed GaAs CCD
Author :
Deyhimy, I. ; Harris, J.S., Jr. ; Eden, R.C. ; Anderson, R.J. ; Edwall, D.D.
Author_Institution :
Rockwell International Electronics Research Center, Thousand Oaks, California
Abstract :
An ultra high speed buried channel Schottky barrier gate GaAs CCD is described which has been operated up to a clock frequency of 500 MHz. The transit time limited upper clock frequency is predicted to exceed 5 GHz.
Keywords :
Bandwidth; Charge coupled devices; Clocks; Frequency; Gallium arsenide; Geometry; Power dissipation; Schottky barriers; Silicon; Substrates;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189700
