• DocumentCode
    3555025
  • Title

    Investigation of microplasmas in InP avalanche photodiodes

  • Author

    Capasso, F. ; Petroff, P.M. ; Bonner, W.B. ; Sumski, S.

  • Author_Institution
    Bell Telephone Laboratories, Murray Hill, New Jersey, USA
  • Volume
    25
  • fYear
    1979
  • fDate
    1979
  • Firstpage
    647
  • Lastpage
    649
  • Abstract
    The electron beam induced current technique has been used to investigate microplasmas in InP avalanche photodiodes. It is shown that microplasmas develop along growth induced doping striations. Edge and bulk microplasmas have been detected, the latter only originating at recombination centers. Leakage currents of 15 nA at 0.9 VBand dc avalanche gains >103have been observed in the best devices.
  • Keywords
    Avalanche photodiodes; Crystalline materials; Diodes; Electron beams; Indium phosphide; Leakage current; Plasma applications; Plasma materials processing; Spontaneous emission; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1979 Internationa
  • Type

    conf

  • DOI
    10.1109/IEDM.1979.189708
  • Filename
    1480573
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555025