MOS-accumulation layer solar cell

This paper describes an MOS-Accumulation layer solar cell having (n⁺-n-p-p⁺) structure. The n-layer of suitable resitivity is obtained by diffusing dopant through a layer of SiO2grown thermally on the p-base having a p⁺-diffusion on the back side. Transport equation analysis reveals low junction leakage current and insensitiveness of the device to surface recombination velocity, yielding high open circuit voltage. Collection efficiency considerations predict better performance of the device. The observed discrepancies in the device behaviour are characterised by excess metal coverage and processing induced nonlinearities. Potential improvements in the MOS-accumulation layer solar cell design are suggested employing process-variability analysis.