• DocumentCode
    3555031
  • Title

    Electron-beam fabricated GaAs integrated circuits

  • Author

    Greiling, P.T. ; Ozdemir, F.S. ; Krumm, C.F. ; Sun, B.L. ; Lohr, R.F., Jr.

  • Author_Institution
    Hughes Research Laboratories, Malibu, CA
  • Volume
    25
  • fYear
    1979
  • fDate
    1979
  • Firstpage
    670
  • Lastpage
    673
  • Abstract
    Direct writing electron-beam lithography has been utilized to fabricate high speed GaAs FET integrated circuits. The fabrication, design and testing of NOR and NAND gate flip flops incorporating 0.5 µm long single and dual-gate FETs is described. The results obtained represent the most complex GaAs integrated circuits fabricated entirely with E-beam lithography and the fastest GaAs FET logic circuits reported.
  • Keywords
    Circuit testing; Diodes; Electron beams; FET integrated circuits; Fabrication; Gallium arsenide; Lithography; Logic circuits; Metallization; Resistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1979 Internationa
  • Type

    conf

  • DOI
    10.1109/IEDM.1979.189714
  • Filename
    1480579
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555031