MM-wave MIMIC receiver components

Author

Trippe, M.W. ; Weinreb, S. ; Duncan, S.W. ; Eskandarian, A. ; Golja, B.A. ; Martel, D.C. ; Mendenilla, G. ; Power, B. ; Sequeira, H.B. ; Southwick, S.B. ; Svensson, S.P. ; Tu, D.-W. ; Byer, N.E.

Author_Institution

Martin Marietta Lab., Baltimore, MD, USA

fYear

1991

fDate

10-11 June 1991

Firstpage

51

Lastpage

54

Abstract

Monolithic W-band amplifiers and a novel W-band mixer fabricated using a 0.1 mu m pseudomorphic MODFET technology are presented. Single-stage W-band amplifiers delivered 8.5-dB gain; four-stage units showed 23-dB maximum gain or 4.5-dB noise figure, 21.7-dB associated gain. Monolithic W-band mixers have shown 11.8 dB conversion loss.<>

Keywords

MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; mixers (circuits); receivers; 11.8 dB; 21.7 dB; 23 dB; 4.5 dB; 8.5 dB; EHF; MM-wave MIMIC; W-band; amplifiers; conversion loss; four-stage units; mixer; monolithic IC; pseudomorphic MODFET technology; receiver components; single stage units; Circuit testing; Design optimization; Diodes; Fabrication; Fingers; HEMTs; MODFET circuits; Millimeter wave circuits; Millimeter wave technology; Millimeter wave transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1991. Digest of Papers, IEEE 1991

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-0087-4

Type

conf

DOI

10.1109/MCS.1991.148086

Filename

148086