GaAs HBT wideband and low power consumption amplifiers to 24 GHz

Author

Kobayashi, K.W. ; Esfandlari, R. ; Hafizi, M.E. ; Streit, D.C. ; Oki, A.K. ; Kim, M.E.

Author_Institution

TRW Inc., Redondo Beach, CA, USA

fYear

1991

fDate

10-11 June 1991

Firstpage

85

Lastpage

88

Abstract

The authors report on the design and performance of a 2-24-GHz distributed matrix amplifier and a 1-20-GHz two-stage Darlington coupled amplifier based on an advanced HBT (heterojunction bipolar transistor) MBE (molecular beam epitaxy) profile which increased the bandwidth response of the distributed and Darlington amplifiers by providing lower base-emitter and collector-base capacitances. The matrix amplifiers have 9.5-dB nominal gain and a 3-dB bandwidth to 24 G-Hz. It is the highest bandwidth reported for an HBT distributed amplifier. The input and output VSWRs (voltage standing wave ratios) are less than 1.5:1 and 2.0:1, respectively. The total power consumed is less than 60 mW. The chip size measures 2.5*2.5 mm. The two-stage Darlington amplifier has 7-dB gain and 3-dB bandwidth to 20 GHz. The input and output VSWRs are less than 1.5:1 and 2.3:1, respectively. This amplifier consumes 380 mW of power and has a chip size of 1.66*1.05 mm.<>

Keywords

III-V semiconductors; MMIC; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; wideband amplifiers; 1 to 24 GHz; 19 GHz; 22 GHz; 380 mW; 60 mW; 7 dB; 9.5 dB; Darlington coupled amplifier; GaAs; HBT; MBE profile; bandwidth response; distributed matrix amplifier; heterojunction bipolar transistor; low power consumption; molecular beam epitaxy; two-stage; wideband; Bandwidth; Broadband amplifiers; Capacitance; Distributed amplifiers; Energy consumption; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Optical coupling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1991. Digest of Papers, IEEE 1991

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-0087-4

Type

conf

DOI

10.1109/MCS.1991.148095

Filename

148095