Title :
C-band GaAs MMIC limiting power amplifier with small insertion-phase variation
Author :
Ozaki, J. ; Arai, K. ; Miyauchi, M. ; Watanabe, S. ; Kamihashi, S.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
A C-band GaAs MMIC (monolithic microwave integrated circuit) limiting power amplifier has been developed by cascading three kinds of MMIC chips (a limiting amplifier, a gain-control amplifier, and a power amplifier) in a single package. It provides an output power of 33.2+or-0.2 dBm with an insertion phase variation of less than 2.3 degrees over an input power range of from 13.5 dBm to 18.5 dBm. The output power can be controlled between 17.8 dBm and 33.2 dBm with an insertion phase variation of less than 22.5 degrees.<>
Keywords :
MMIC; field effect integrated circuits; gallium arsenide; microwave amplifiers; power amplifiers; C-band; FET circuit; GaAs; MMIC; gain-control amplifier; insertion-phase variation; limiting power amplifier; monolithic microwave integrated circuit; Equivalent circuits; FETs; Gain control; Gallium arsenide; MMICs; Microwave amplifiers; Power amplifiers; Power generation; Radiofrequency amplifiers; Schottky diodes;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1991. Digest of Papers, IEEE 1991
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-0087-4
DOI :
10.1109/MCS.1991.148098
