Title :
Experimental and theoretical characterization of submicron MOSFETs
Author :
Fichtner, W. ; Fuls, E.N. ; Johnston, R.L. ; Sheng, T.T. ; Watts, R.K.
Author_Institution :
Bell Laboratories, Murray Hill, New Jersey
Abstract :
We report on measurements and computer simulations for enhancement and depletion MOSFETs with submicron channel lengths as small as 0.2 µm. The behavior of the devices is analyzed using both advanced techniques such as transmission electron microscopy for profile measurements and numerical models to simulate processing conditions and device behavior in two dimensions.
Keywords :
Annealing; Doping; Fabrication; Geometry; Implants; MOSFETs; Numerical simulation; Solid modeling; Testing; Transmission electron microscopy;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189743
