DocumentCode
3555104
Title
Experimental and theoretical characterization of submicron MOSFETs
Author
Fichtner, W. ; Fuls, E.N. ; Johnston, R.L. ; Sheng, T.T. ; Watts, R.K.
Author_Institution
Bell Laboratories, Murray Hill, New Jersey
Volume
26
fYear
1980
fDate
1980
Firstpage
24
Lastpage
27
Abstract
We report on measurements and computer simulations for enhancement and depletion MOSFETs with submicron channel lengths as small as 0.2 µm. The behavior of the devices is analyzed using both advanced techniques such as transmission electron microscopy for profile measurements and numerical models to simulate processing conditions and device behavior in two dimensions.
Keywords
Annealing; Doping; Fabrication; Geometry; Implants; MOSFETs; Numerical simulation; Solid modeling; Testing; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1980 International
Type
conf
DOI
10.1109/IEDM.1980.189743
Filename
1481186
Link To Document