Title :
A symmetrical bipolar structure
Author :
Tang, D.D. ; Silvestri, V.J. ; Yu, H.N. ; Reisman, A.
Author_Institution :
IBM T. J. Watson Research Center, Yorktown Heights, N.Y.
Abstract :
This paper presents symmetrical bipolar-transistor structures suitable for bilateral operation. Such structures were fabricated using a technique of simultaneous-growth of epitaxial and polycrystalline Si on a stack structure. Vertical symmetrical transistors have been built and showed an emitter-base diode breakdown voltage of 7V, a current gain of 17.
Keywords :
Bipolar transistors; Circuit optimization; Crystallization; Current supplies; Degradation; Diodes; Fabrication; MOSFETs; Substrates; Switching circuits;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189752
