Title :
A FET-controlled thyristor in SIPMOS technology
Author :
Leipold, L. ; Baumgartner, W. ; Ladenhauf, W. ; Stengl, J.P.
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
The SIPMOS (Siemens Power MOS) technology was developed for power MOSFETs as well as a. c. power switches in which MOS technology is functionally combined with bipolar devices. This technology which has process steps like those of conventional integrated MOS circuits was used to realize a FET-controlled thyristor. The SIPMOS thyristor shows excellent qualities with regard to on-state current (di/dt=4000 A/us) voltage immunity (dV/dt > 1200 V/us), and firing sensitivity.
Keywords :
Anodes; Cathodes; Electrodes; Integrated circuit technology; MOSFETs; P-n junctions; Silicon; Space charge; Thyristors; Voltage control;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189758
