Title :
High frequency performance of VDMOS power transistors
Author :
Mena, J. ; McGregor, P. ; Salama, C.A.T.
Author_Institution :
University of Toronto, Ontario, Canada
Abstract :
The performance of VDMOS power devices for high frequency linear applications is investigated in this paper. In particular a model relating technology and layout parameters is developed to optimize device design. The model is used to predict the performance of an experimental high frequency VDMOST as well as to establish ultimate performance limitations of optimized devices.
Keywords :
Capacitance; Conductivity; Fingers; Frequency; Metallization; Power transistors; Space charge; Transconductance; Voltage; Zinc oxide;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189761
