Quarter micron gate low noise GaAsFET´s operable up to 30 GHz

Quarter micron gate low noise GaAs MESFET´s have been developed by delineating gate electrodes with an electron beam lithography technique and by reducing parasitic source and gate resistances. At 18GHz, a noise figure of 1.9dB with an associated gain of 7dB and a maximum available gain of 11dB were obtained at drain currents of 10mA and 30mA, respectively. At 30GHz, a noise figure of 4dB with an associated gain of 5dB and a maximum available gain of 8dB were obtained. The measured noise figures are the best values reported so far, and this work has demonstrated the feasibility of utilizing GaAs MESFET´s up to millimeter-wave regions.