Title :
GaAs FET large signal model and design applications
Author :
Tajima, Yusuke ; Wrona, Beverly ; Mishima, Katsuhiko
Author_Institution :
Raytheon Company Research Division, Waltham, Massachusetts
Abstract :
A large signal GaAs FET model is derived based on dc characteristics of the devices. Analytical expressions of nonlinear elements in the model are presented in a form convenient for circuit design. Power saturation and gain characteristics of a GaAs FET are studied theoretically and experimentally. An oscillator design employing the large signal model is demonstrated.
Keywords :
Capacitance; Equivalent circuits; FETs; Gallium arsenide; Intrusion detection; Oscillators; Power amplifiers; Predictive models; Signal design; Voltage;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189769
