DocumentCode
3555144
Title
Aluminum patterning by ion implantation
Author
Pankove, J.I. ; Wu, C.P.
Author_Institution
RCA Laboratories, Princeton, New Jersey
Volume
26
fYear
1980
fDate
1980
Firstpage
156
Lastpage
158
Abstract
This is a preliminary report on the use of ion implantation to influence the etch rates of thin aluminum films, thus permitting fabrication of patterns in Al films by chemical etching.
Keywords
Aluminum; Conductors; Electron beams; Etching; Hydrocarbons; Ion implantation; Morphology; Polymers; Silicides; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1980 International
Type
conf
DOI
10.1109/IEDM.1980.189778
Filename
1481221
Link To Document