Title :
Aluminum patterning by ion implantation
Author :
Pankove, J.I. ; Wu, C.P.
Author_Institution :
RCA Laboratories, Princeton, New Jersey
Abstract :
This is a preliminary report on the use of ion implantation to influence the etch rates of thin aluminum films, thus permitting fabrication of patterns in Al films by chemical etching.
Keywords :
Aluminum; Conductors; Electron beams; Etching; Hydrocarbons; Ion implantation; Morphology; Polymers; Silicides; Testing;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189778
