Title :
The physics of heavily-doped n+-p junction solar cells
Author_Institution :
WPI, Worcester, Massachusetts
Abstract :
A simplified model of the semi-transparent emitter of silicon solar cells is presented including Auger recombination, degeneracy and band-gap narrowing. The dark current is calculated with and without surface recombination at the free emitter surface. Excellent agreement is found with experimental observations.
Keywords :
Charge carrier lifetime; Dark current; Doping; Photonic band gap; Photovoltaic cells; Physics; Semiconductor process modeling; Silicon; Solar energy; Spontaneous emission;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189792
