Process modeling of multilayer structures involving polycrystalline silicon

A process model capability has been developed to simulate the electrical and metallurgical parameters of multilayer structures involving polycrystalline Silicon, such as poly gate and buried contacts. Experimental and simulated results are shown for poly interconnection lines on oxide and buried contacts to bulk Silicon. The simulation of poly processing effects including the instantaneous oxidation rate, the penetration of impurities through the gate oxide and sheet resistivity of poly interconnects, as well as the impurity profiles in the buried contact structures are discussed.