Title :
Process design using coupled 2D process and device simulators
Author :
Chin, D.J. ; Kump, M.R. ; Lee, H.G. ; Dutton, R.W.
Author_Institution :
Stanford University, Stanford, CA
Abstract :
A novel 2D process simulator has been developed which can handle local oxidation, implantation through arbitrary mask edges, non-planar surfaces, and high concentration diffusion. Through coupling of 2D process and device simulators, simple power law dependencies relating breakdown voltage and perimeter junction capacitance to field implantation dose and local oxidation time have been obtained.
Keywords :
Analytical models; Boron; Capacitance; Difference equations; Electrostatics; Finite difference methods; Impurities; Oxidation; Process design; Topology;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189799
