DocumentCode
3555168
Title
Two-dimensional integrated circuit process modeling program - RECIPE
Author
Smith, G.E. ; Steckl, A.J.
Author_Institution
Rensselaer Polytechnic Institute, Troy, New York
Volume
26
fYear
1980
fDate
1980
Firstpage
227
Lastpage
230
Abstract
RECIPE is a two-dimensional (2-D) process modeling program developed for use in VLSI applications. The program incorporates a 2-D diffusion model which includes the concentration dependence of the diffusion coefficients. An incremental solution method is used to compute the appropriate diffusion coefficients as a function of time and distance. RECIPE has been used to model impurity profiles in short-channel MOSFET\´s with either P or As source and drain implants. For typical P and As implant conditions of 150 keV,
/cm2and 30 min. anneal at 1000°C, 1µm gate MOSFET\´s resulted in effective channel lengths of 0.2 and 0.5 µm, respectively.
/cm2and 30 min. anneal at 1000°C, 1µm gate MOSFET\´s resulted in effective channel lengths of 0.2 and 0.5 µm, respectively.Keywords
Annealing; Equations; Etching; Implants; Impurities; Integrated circuit modeling; Ion implantation; Laboratories; Two dimensional displays; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1980 International
Type
conf
DOI
10.1109/IEDM.1980.189800
Filename
1481243
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