• DocumentCode
    3555168
  • Title

    Two-dimensional integrated circuit process modeling program - RECIPE

  • Author

    Smith, G.E. ; Steckl, A.J.

  • Author_Institution
    Rensselaer Polytechnic Institute, Troy, New York
  • Volume
    26
  • fYear
    1980
  • fDate
    1980
  • Firstpage
    227
  • Lastpage
    230
  • Abstract
    RECIPE is a two-dimensional (2-D) process modeling program developed for use in VLSI applications. The program incorporates a 2-D diffusion model which includes the concentration dependence of the diffusion coefficients. An incremental solution method is used to compute the appropriate diffusion coefficients as a function of time and distance. RECIPE has been used to model impurity profiles in short-channel MOSFET\´s with either P or As source and drain implants. For typical P and As implant conditions of 150 keV, 1 \\times 10^{16} /cm2and 30 min. anneal at 1000°C, 1µm gate MOSFET\´s resulted in effective channel lengths of 0.2 and 0.5 µm, respectively.
  • Keywords
    Annealing; Equations; Etching; Implants; Impurities; Integrated circuit modeling; Ion implantation; Laboratories; Two dimensional displays; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1980 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1980.189800
  • Filename
    1481243