RECIPE is a two-dimensional (2-D) process modeling program developed for use in VLSI applications. The program incorporates a 2-D diffusion model which includes the concentration dependence of the diffusion coefficients. An incremental solution method is used to compute the appropriate diffusion coefficients as a function of time and distance. RECIPE has been used to model impurity profiles in short-channel MOSFET\´s with either P or As source and drain implants. For typical P and As implant conditions of 150 keV,

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2and 30 min. anneal at 1000°C, 1µm gate MOSFET\´s resulted in effective channel lengths of 0.2 and 0.5 µm, respectively.