Title :
Verification of heavy doping parameters in semiconductor device modeling
Author :
Gaur, S.P. ; Srinivasan, G.R. ; Antipov, I.
Author_Institution :
IBM Data Systems Division, Hopewell Junction, New York
Abstract :
A mathematical model has been formulated which solves semiconductor transport equations with heavy-doping corrections. This model requires only the device dimension and doping profile as input parameters. Model predictions agree very well with measured terminal characteristics of various NPN and PNP transistor structures and support heavy-doping parameters used in the model.
Keywords :
Equations; Integrated circuit modeling; Mathematical model; Neodymium; Photonic band gap; Radiative recombination; Semiconductor device doping; Semiconductor device modeling; Semiconductor process modeling; Silicon;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189813
