Title :
A new model for the second breakdown of bipolar transistors
Author :
Latif, M. ; Bryant, P.R.
Author_Institution :
University of Waterloo, Waterloo, Ontario, Canada
Abstract :
A triggering mechanism of second breakdown is proposed, which depends solely upon the existence of multiple equilibrium points for certain biasing conditions. Using a simple one-dimensional model we are able to predict that part of the safe-operating-area boundary limited by second breakdown. We find that our computed results compare favourably with various experimental measurements made.
Keywords :
Bipolar transistors; Breakdown voltage; Content addressable storage; Delay effects; Electric breakdown; Heating; Temperature distribution;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189817
