DocumentCode :
3555197
Title :
Characterization of ULSI gate oxide reliability using substrate and channel electron injection stresses
Author :
Nishida, Toshikazu ; Thompson, Scott E. ; Kavalieros, Jack T. ; Lu, Yi ; Han, Michael K.
Author_Institution :
Florida Univ., Gainesville, FL, USA
fYear :
1991
fDate :
12-14 Jun 1991
Firstpage :
84
Lastpage :
88
Abstract :
A hot electron reliability characterization methodology has been developed to separate the geometry and process related degradations using BIMOS (bipolar-MOS) and SMOSC (sourced MOS capacitor) tests structures which uniformly inject the hot electrons from the substrate into the oxide. In both test structures, the gate oxide current is independently controlled from the oxide electric field. The uniform injection into the gate oxide obtained in the BiMOS DC and the SMOSC AC (pulsed) substrate injection techniques facilitates rapid evaluation of gate oxide quality in the manufacturing environment independent of the drain doping profile
Keywords :
BIMOS integrated circuits; MOS integrated circuits; VLSI; circuit reliability; hot carriers; integrated circuit testing; metal-insulator-semiconductor devices; BIMOS; SMOSC; ULSI gate oxide reliability; channel electron injection stresses; drain doping profile; gate oxide quality; hot electron reliability characterization; manufacturing environment; process related degradations; test structures; uniform injection; Degradation; Electron emission; Electron traps; Geometry; MOSFETs; Manufacturing; Oxidation; Substrate hot electron injection; Testing; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1991. Proceedings., Ninth Biennial
Conference_Location :
Melbourne, FL
ISSN :
0749-6877
Print_ISBN :
0-7803-0109-9
Type :
conf
DOI :
10.1109/UGIM.1991.148127
Filename :
148127
Link To Document :
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