Title :
Non-destructive image sensor
Author :
Ohmi, Tadahiro ; Tamamushi, Takashige ; Nishizaw, Jun-ichi
Author_Institution :
Tohoku University, Sendai, Japan
Abstract :
New imaging device characterized by non-destructive read-out operation is discussed theoretically concentrating on an optical sensing process and a read-out process. The light information is continuously stored in this imaging device even during the read-out process. It has been demonstrated theoretically that the stored voltage is almost independent of the storage capacitance due to the existence of the floating n+p contact and that the read-out voltage is almost independent of the bit line capacitance. The new imaging device has excellent features such as non-destructive characteristic, high sensitivity and wide dynamic range.
Keywords :
Capacitance; Dynamic range; Electrodes; Electrons; Image sensors; Image storage; MOSFETs; Optical imaging; Optical sensors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189834