Effects of Auger recombination on double heterojunction 1.3 µm GaInAsP/InP light-emitting diodes

A model which describes Auger non-radiative recombination in 1.3 µm double heterostructure GaInAsP/InP LED´s is proposed. The model predicts that the rapid decrease in external quantum efficiency with increasing device current is due to the strong dependence of Auger recombination rate on the free carrier charge density in the active region. Analysis of LED L-I data yields an Auger recombination coefficient of 10^-28cm^-6/s. This value is in good agreement with theoretical estimates derived from the effective mass of electrons in GaInAsP. Predictions can also be made, using the analytical model, concerning the effect of active layer doping level on device linearity, minority carrier lifetime, radiative lifetime and optical bandwidth.