• DocumentCode
    3555216
  • Title

    High frequency bipolar - JFET - I2L process

  • Author

    Lui, S.K. ; Meyer, R.G.

  • Author_Institution
    University of California, Berkeley, CA
  • Volume
    26
  • fYear
    1980
  • fDate
    1980
  • Firstpage
    382
  • Lastpage
    385
  • Abstract
    A new monolithic process is described which allows simultaneous fabrication of high-speed (fT=400 MHz) JFETs, high-frequency (fT=4 GHz) bi-polar transistors plus I2L logic (td=14 ns). The process incorporates an ion-implanted JFET structure with independently contacted gates and a bi-polar transistor with implanted base and emitter.
  • Keywords
    Bipolar transistors; Capacitance; Fabrication; Frequency estimation; Implants; Integrated circuit reliability; Integrated circuit technology; JFET circuits; Laboratories; Logic;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1980 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1980.189844
  • Filename
    1481287
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555216