Title :
High frequency bipolar - JFET - I2L process
Author :
Lui, S.K. ; Meyer, R.G.
Author_Institution :
University of California, Berkeley, CA
Abstract :
A new monolithic process is described which allows simultaneous fabrication of high-speed (fT=400 MHz) JFETs, high-frequency (fT=4 GHz) bi-polar transistors plus I2L logic (td=14 ns). The process incorporates an ion-implanted JFET structure with independently contacted gates and a bi-polar transistor with implanted base and emitter.
Keywords :
Bipolar transistors; Capacitance; Fabrication; Frequency estimation; Implants; Integrated circuit reliability; Integrated circuit technology; JFET circuits; Laboratories; Logic;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189844
