• DocumentCode
    3555221
  • Title

    GaAs bipolar integrated circuit technology

  • Author

    Yuan, H.T. ; McLevige, W.V. ; Doerbeck, F.H. ; Dierschke, E.G.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, Texas
  • Volume
    26
  • fYear
    1980
  • fDate
    1980
  • Firstpage
    398
  • Lastpage
    400
  • Abstract
    Gallium arsenide npn transistors were fabricated successfully by ion implant techniques. The transistors showed normal current gain of 20 ∼ 25 with the substrate used as collector, and inverted current gain of 5 ∼ 6 with the substrate used as emitter. By combining ion implanted resistors and using the transistors operated in the inverted model, it is possible to design and fabricate I2L-like integrated circuits simply.
  • Keywords
    Annealing; Bipolar integrated circuits; Bipolar transistors; Gallium arsenide; High speed integrated circuits; Implants; Integrated circuit technology; Resistors; Resists; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1980 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1980.189848
  • Filename
    1481291
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555221