Title :
Reactive ion etching for VLSI
Author :
Ephrath, L.M. ; Ephrath, L.M.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
Abstract :
The requirements of VLSI have lead to the development of etching techniques that are capable of transferring ever smaller dimension patterns into the various films that make up a device
Keywords :
Cathodes; Counting circuits; Dry etching; Electrodes; Inductors; Plasma applications; Plasma confinement; Plasma devices; Plasma materials processing; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189850
