• DocumentCode
    3555224
  • Title

    Dry etching technology for 1 µm VLSI fabrication

  • Author

    Hirata, K. ; Ozaki, Y. ; Oda, Masaomi ; Kimizuka, M. ; Kimizuka, M.

  • Author_Institution
    Musashino Electrical Communication Laboratory, NTT, Tokyo, Japan
  • fYear
    1980
  • fDate
    8-10 Dec. 1980
  • Firstpage
    405
  • Lastpage
    408
  • Abstract
    A dry etching technology for 1 µn VLSI fabrication has been developed. Parallel plate RF diode reactors are used for all etching materials:Si3N4, Si02, PSG, poly-Si, Si
  • Keywords
    Dry etching; Fabrication; Foot; Plasma applications; Plasma properties; Resists; Substrates; Surface cleaning; Surface contamination; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1980 International
  • Conference_Location
    Washington, DC, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1980.189851
  • Filename
    1481294
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555224