Title :
Electron-beam direct writing technology for 1 µm VLSI fabrication
Author :
Sakakibara, Y. ; Ogawa, T. ; Komatsu, K. ; Moriya, S. ; Kobayashi, M. ; Kobayashi, T.
Author_Institution :
Musashino Electrical Communication Laboratory, NTT, Tokyo, Japan
Abstract :
Electron-beam (EB) direct writing technology using variable-shaped EB system has been developed for VLSI fabrication with 1 µm minimum linewidth. New processing program, PEBL, and new proximity correction technique, DCA, are proposed. Resist process conditions using CMS and FPM resist are studied. The successful fabrication of a 1 µm 256-kbit MOS RAM demonstrates the validity of the technology.
Keywords :
Algorithm design and analysis; Collision mitigation; Design automation; Fabrication; Lenses; Lithography; Resists; Throughput; Very large scale integration; Writing;
Conference_Titel :
Electron Devices Meeting, 1980 International
Conference_Location :
Washington, DC, USA
DOI :
10.1109/IEDM.1980.189856
