Capacitance-voltage characteristics of amorphous silicon based metal-insulator-semiconductor structure

Author

Choi, J.S. ; Neudeck, G.W.

Author_Institution

Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

1991

fDate

12-14 Jun 1991

Firstpage

98

Lastpage

102

Abstract

A capacitance-voltage model for the a-Si:H-based metal-insulator-semiconductor (MIS) structure is presented, along with an alternative direct measurement method. The C-V model is based on the static I-V model developed using the simplified CFO band model for the a-Si bulk band gap states and the simplified Davis-Mott model for the surface states. The frequency variation of the measured admittance, using a somewhat modified thin-film transistor (TFT), is also modeled with the lateral flow transmission line model. These models can be used to monitor TFT-fabrication parameters and to extract accurate capacitance model parameters

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; semiconductor device models; silicon; thin film transistors; C-V model; CFO band model; Davis-Mott model; Si:H; TFT-fabrication parameters; bulk band gap states; capacitance-voltage model; frequency variation; lateral flow transmission line model; metal-insulator-semiconductor structure; static I-V model; surface states; thin-film transistor; Admittance measurement; Amorphous silicon; Capacitance measurement; Capacitance-voltage characteristics; Fluid flow measurement; Frequency measurement; Metal-insulator structures; Photonic band gap; Thin film transistors; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 1991. Proceedings., Ninth Biennial

Conference_Location

Melbourne, FL

ISSN

0749-6877

Print_ISBN

0-7803-0109-9

Type

conf

DOI

10.1109/UGIM.1991.148130

Filename

148130