DocumentCode
3555232
Title
A 1 µm process: Linewidth control using 10:1 projection lithography
Author
Sigusch, R. ; Horninger, K.H. ; Muller, W.A. ; Widmann, D. ; Oldham, W.G.
Author_Institution
Siemens Research Laboratories, Munich, Germany
fYear
1980
fDate
8-10 Dec. 1980
Firstpage
429
Lastpage
432
Abstract
An n channel silicon gate MOS process using 10:1 optical projection is described. The minimum dimensions are in the range of 1 µm. Linewidths can be controlled within ± 0.2 µm limits for the polysilicon and the contact hole mask levels, and within ± 0.1 µm for the field oxide and the aluminum mask level. A comparison of measured linewidth variations with variations of simulated photoresist linewidths shows that about one third of the measured variations can be attributed to photolithography.
Keywords
Anisotropic magnetoresistance; Circuit testing; Electronic switching systems; Integrated circuit testing; Lenses; Lithography; Optical films; Process control; Resists; Sputter etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1980 International
Conference_Location
Washington, DC, USA
Type
conf
DOI
10.1109/IEDM.1980.189857
Filename
1481300
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