DocumentCode
3555239
Title
Fabrication and evaluation of GaAs-GaAlAs double-velocity IMPATT diodes
Author
Hoke, W.E. ; Traczewski, R.
Author_Institution
Raytheon Research Division, Waltham, Massachusetts
Volume
26
fYear
1980
fDate
1980
Firstpage
452
Lastpage
455
Abstract
Double-velocity IMPATT diodes have been fabricated and cw tested at X-band. From flat-profile single-drift material, 2.2 watts with II percent efficiency was attained. Somewhat higher efficiency was achieved with a High-Low structure. These results exceed previously reported heterojunction diode measurements. The flat-profile results are comparable to the performance of the corresponding GaAs structure. No significant difference was observed in the thermal resistance of the double-velocity diode and the conventional diode.
Keywords
Electron mobility; Fabrication; Gallium arsenide; Heterojunctions; Radio frequency; Semiconductor diodes; Semiconductor materials; Testing; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1980 International
Type
conf
DOI
10.1109/IEDM.1980.189864
Filename
1481307
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