Title :
Fabrication and evaluation of GaAs-GaAlAs double-velocity IMPATT diodes
Author :
Hoke, W.E. ; Traczewski, R.
Author_Institution :
Raytheon Research Division, Waltham, Massachusetts
Abstract :
Double-velocity IMPATT diodes have been fabricated and cw tested at X-band. From flat-profile single-drift material, 2.2 watts with II percent efficiency was attained. Somewhat higher efficiency was achieved with a High-Low structure. These results exceed previously reported heterojunction diode measurements. The flat-profile results are comparable to the performance of the corresponding GaAs structure. No significant difference was observed in the thermal resistance of the double-velocity diode and the conventional diode.
Keywords :
Electron mobility; Fabrication; Gallium arsenide; Heterojunctions; Radio frequency; Semiconductor diodes; Semiconductor materials; Testing; Thermal resistance; Voltage;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189864
