High performance 1.3 µm InGaAsP edge-emitting LEDs

Both vapor phase epitaxy (VPE) and liquid phase epitaxy (LPE) have been used to fabricate 1.3 µm InGaAsP/InP double heterojunction edge-emitting LEDs. Narrow contact stripes (12 µm), thin active regions (300-1200 Å) and modified device geometries were used to improve the coupling efficiency of these LEDs to optical fibers. Over 130 µW of optical power has been coupled into 50 µm core 0.2 N.A. graded index fiber. Coupling efficiencies over 10% were measured with both VPE and LPE devices. Modulation rates over 200 MHz (3 dB point) and rise times ∼2 ns have also been measured. The increased coupling efficiency together with high speed operation is attributed to the use of the edge-emitting device structure with thin active regions. Operating lifetimes of over 14,000 hours at 70°C and 3000 hours at 120°C have also been observed.