• DocumentCode
    3555265
  • Title

    The role of interface states in photoelectrochemical cells

  • Author

    Kar, S. ; Jain, S. ; Heller, Adam ; Ashok, S. ; Fonash, S.J.

  • Author_Institution
    Indian Institute of Technology, Kanpur, India
  • Volume
    26
  • fYear
    1980
  • fDate
    1980
  • Firstpage
    538
  • Lastpage
    544
  • Abstract
    Theoretical and experimental analysis of the role of the surface states in photoelectrochemical cells has been carried out. The possible role of interface states in the potential barrier in the semiconductor space charge layer, in the change of the interphase potential with the photovoltage, and in the transfer of charge across the interphase have been discussed. The effect of ruthenium treatment of the GaAs electrode on the interface states in n-GaAs/0.8M K2Se- 0.1M K2Se2-1M KOH/C cell has been experimenally analyzed.
  • Keywords
    Chemicals; Circuits; Electrodes; Energy states; Gallium arsenide; Hysteresis; Interface states; Photonic band gap; Semiconductor diodes; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1980 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1980.189887
  • Filename
    1481330
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555265