DocumentCode :
3555276
Title :
Plasma resist image stabilization technique (PRIST)
Author :
Ma, W.H.-L.
Author_Institution :
IBM Data Systems Division, Hopewell Junction, New York
Volume :
26
fYear :
1980
fDate :
1980
Firstpage :
574
Lastpage :
575
Abstract :
PRIST, using a fluorocarbon plasma, effectively stabilizes the developed resist image in the production of integrated circuits. This plasma treatment, which is done at low power for a short time, allows the resist to be baked in excess of 210°C with no measurable change in dimensions. This phenomenon is attributed to the change in thermal properties of the resist surface effected by the active fluorine and fluorocarbon species generated in the plasma.
Keywords :
Etching; Inductors; Plasma applications; Plasma immersion ion implantation; Plasma materials processing; Plasma measurements; Plasma properties; Plasma temperature; Resists; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1980 International
Type :
conf
DOI :
10.1109/IEDM.1980.189897
Filename :
1481340
Link To Document :
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