Title :
Velocity overshoot investigations in sub-micron GaAs devices by photoconduction experiments
Author :
Laval, S. ; Bru, C. ; Arnodo, C. ; Castagne, R.
Author_Institution :
Université Paris Sud, Orsay Cedex, France
Abstract :
Direct evidence for electron velocity overshoot is obtained in Ga As sub-micron devices at room temperature. Photoconduction current variations as a function of electric field are compared for various device lengths and several incident light wavelengths.
Keywords :
Electrons; Epitaxial layers; Gallium arsenide; Microstrip; Photoconducting devices; Photoconductivity; Strips; Surface resistance; Temperature; Voltage;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189911
