• DocumentCode
    3555293
  • Title

    Ballistic electron impact ionization in GaAs and in InP avalanche devices

  • Author

    Capasso, F. ; Bachelet, G.B.

  • Author_Institution
    Bell Laboratories, Murray Hill, New Jersey
  • Volume
    26
  • fYear
    1980
  • fDate
    1980
  • Firstpage
    633
  • Lastpage
    636
  • Abstract
    It is shown that electrons have a high probability Pth of ballistically gaining the ionization threshold energy when a high electric field E(>4×105V/cm) is applied along certain crystal orientations in GaAs and InP avalanche devices. In GaAs we find Pth() < Pth(), whereas in InP the opposite occurs indicating a strong band structure dependence of the ionization process and of ballistic transport. The electron ionization rates calculated from our ballistic model do not contain any adjustable parameter and are in good agreement with experimental data in GaAs.
  • Keywords
    Ballistic transport; Electrons; Gallium arsenide; IEEE members; Impact ionization; Indium phosphide; Phonons; Scattering; Temperature dependence; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1980 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1980.189913
  • Filename
    1481356
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555293