Electron spin grating in multiple quantum well semiconductors

Author

Cameron, A.R. ; Riblet, P. ; Miller, Alice

Author_Institution

J.F. Allen Res. Labs., St. Andrews Univ., UK

fYear

1996

fDate

7-7 June 1996

Firstpage

141

Lastpage

142

Abstract

Summary form only given. We report a new type of optically induced, transient diffraction grating in a multiple quantum well (MQW) semiconductor. The grating is formed by the spatial modulation of the electron spin orientation within a uniform excess carrier distribution and allows the measurement of the in-well electron mobility. We present four-wave mixing results for spin-gratings in a GaAs/AlGaAs MQW semiconductor using picosecond laser pulses and compare the diffusion coefficients determined from spin and amplitude gratings.

Keywords

III-V semiconductors; aluminium compounds; diffraction gratings; electron mobility; electron spin polarisation; gallium arsenide; multiwave mixing; semiconductor quantum wells; GaAs-AlGaAs; carrier distribution; diffusion coefficient; electron mobility; electron spin grating; four-wave mixing; multiple quantum well semiconductor; optical transient diffraction grating; picosecond laser pulses; Diffraction gratings; Electron mobility; Electron optics; Four-wave mixing; Gallium arsenide; Nonlinear optics; Optical diffraction; Optical mixing; Optical modulation; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-444-0

Type

conf

Filename

865682