• DocumentCode
    3555323
  • Title

    Two dimensional nature of diffused line capacitance in coplanar MOS structures

  • Author

    Iwai, Hiroshi ; Taniguchi, Kenji ; Konaka, Masami ; Maeda, Shigenobu ; Nishi, Yoshio

  • Author_Institution
    Toshiba Corporation, Kawasaki, Japan
  • Volume
    26
  • fYear
    1980
  • fDate
    1980
  • Firstpage
    728
  • Lastpage
    731
  • Abstract
    Two dimensional nature of diffused line capacitance in the coplanar MOS LSI structure is investigated delineating importance of the side wall capacitance with decreasing feature size of devices. The effects of field channel stop ion implantation on the narrow channel effect, the field MOS threshold voltage and the junction breakdown voltage are also discussed toward optimization of coplanar process parameters.
  • Keywords
    Boron; Breakdown voltage; Capacitance measurement; Large scale integration; MOSFETs; Monitoring; Parasitic capacitance; Semiconductor devices; Testing; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1980 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1980.189940
  • Filename
    1481383
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555323