DocumentCode
3555335
Title
Electron beam lithography for small MOSFETs
Author
Watts, R.K. ; Fichtner, W. ; Fuls, E.N. ; Thibault, L.R. ; Johnston, R.L.
Author_Institution
Bell Laboratories, Murray Hill, New Jersey
Volume
26
fYear
1980
fDate
1980
Firstpage
772
Lastpage
775
Abstract
A novel conductive multilevel resist structure has been employed for the six lithographic steps in an nMOS process to produce devices with micron and submicron channel lengths, Enhancement transistor thresholds of 0.7V and ring oscillator stage., delays of 0.11 ns are obtained.
Keywords
Coordinate measuring machines; Electron beams; Lithography; MOS devices; MOSFETs; Resists; Silicon; Sputter etching; Substrates; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1980 International
Type
conf
DOI
10.1109/IEDM.1980.189951
Filename
1481394
Link To Document