Title :
Electron beam lithography for small MOSFETs
Author :
Watts, R.K. ; Fichtner, W. ; Fuls, E.N. ; Thibault, L.R. ; Johnston, R.L.
Author_Institution :
Bell Laboratories, Murray Hill, New Jersey
Abstract :
A novel conductive multilevel resist structure has been employed for the six lithographic steps in an nMOS process to produce devices with micron and submicron channel lengths, Enhancement transistor thresholds of 0.7V and ring oscillator stage., delays of 0.11 ns are obtained.
Keywords :
Coordinate measuring machines; Electron beams; Lithography; MOS devices; MOSFETs; Resists; Silicon; Sputter etching; Substrates; Writing;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189951
