DocumentCode :
3555342
Title :
Yield analysis for a large-area analog X-ray sensor array
Author :
Einsenstadt, W.R. ; Potluri, S.S. ; Rambo, K.J. ; Fox, R.M.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fYear :
1991
fDate :
12-14 Jun 1991
Firstpage :
149
Lastpage :
152
Abstract :
A small-scale CMOS-based radiographic X-ray image sensor array has been developed for nondestructive test and medical imaging. The authors present an analysis of tradeoffs between yield and area of a scaled up large-area X-ray sensor design. The X-ray sensor array can tolerate a low level of faults in the individual pixel cells and these faults can be corrected by imaging software. However, global signal line faults cause X-ray sensor failures. This work models X-ray sensor yield in a 12-layer analog CMOS process for three possible overall defect densities, 1.5 defects/cm, 1.0 defects/cm, and 0.75 defects/cm. It is shown that the X-ray sensor is more manufacturable than a charge coupled device (CCD) array of the same area
Keywords :
CMOS integrated circuits; X-ray detection and measurement; diagnostic radiography; image sensors; nondestructive testing; statistical analysis; CMOS-based sensor; analog CMOS process; analog X-ray sensor array; fault correction; global signal line faults; image sensor; imaging software; medical imaging; nondestructive test; radiographic type; yield analysis; Biomedical imaging; Image sensors; Medical tests; Nondestructive testing; Optical imaging; Pixel; Radiography; Semiconductor device modeling; Sensor arrays; X-ray imaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1991. Proceedings., Ninth Biennial
Conference_Location :
Melbourne, FL
ISSN :
0749-6877
Print_ISBN :
0-7803-0109-9
Type :
conf
DOI :
10.1109/UGIM.1991.148140
Filename :
148140
Link To Document :
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