DocumentCode :
3555343
Title :
The junction MOS (JMOS) transistor - A high speed transistor for VLSI
Author :
Sun, E. ; Hoefflinger, B. ; Moll, J. ; Sodini, C. ; Zimmer, G.
Author_Institution :
Hewlett-Packard Laboratories, Palo Alto, CA
Volume :
26
fYear :
1980
fDate :
1980
Firstpage :
791
Lastpage :
794
Abstract :
A new type of MOS device (JMOS) has been fabricated with both bulk and SOS technology, using a layered n-p p-junction structure underneath the MOS gate region. This structure reduces the surface field while maintaining surface conduction. The effective mobility of these junction MOS devices exceeds that of conventional MOS devices by 20-40 percent in bulk and by 50-70 percent in SOS. The saturation current of JMOS compared to conventional MOS also increases from 50 to more than 100 percent. However, the improvement in current drive capability decreases as effective gate bias increases or as the channel length decreases due to the high field effect.
Keywords :
Capacitance; Doping; Laboratories; MOS devices; MOSFETs; Scattering; Sun; Transconductance; Very large scale integration; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1980 International
Type :
conf
DOI :
10.1109/IEDM.1980.189957
Filename :
1481400
Link To Document :
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