The junction MOS (JMOS) transistor - A high speed transistor for VLSI

A new type of MOS device (JMOS) has been fabricated with both bulk and SOS technology, using a layered n-p p-junction structure underneath the MOS gate region. This structure reduces the surface field while maintaining surface conduction. The effective mobility of these junction MOS devices exceeds that of conventional MOS devices by 20-40 percent in bulk and by 50-70 percent in SOS. The saturation current of JMOS compared to conventional MOS also increases from 50 to more than 100 percent. However, the improvement in current drive capability decreases as effective gate bias increases or as the channel length decreases due to the high field effect.