DocumentCode
3555344
Title
Basic properties of lateral MIS tunnel transistor
Author
Ruzyllo, J. ; Stach, J.
Author_Institution
The Pennsylvania State University, University Park, PA
Volume
26
fYear
1980
fDate
1980
Firstpage
795
Lastpage
796
Abstract
The Lateral MIS Tunnel Transistor (LMISTT) is a transistor structure which exploits the combined properties of lateral MIS tunnel structures and non-equilibrium MIS tunnel diodes. Due to its features the LMISTT offers possibilities in a variety of applications including very large scale integrated high speed IC´s. In this work the various aspects of design and processing of this device are discussed in relation to its basic properties and performance.
Keywords
Application specific integrated circuits; Electrons; Isolation technology; Light emitting diodes; Process design; Silicon; Solid state circuits; Substrates; Thin film transistors; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1980 International
Type
conf
DOI
10.1109/IEDM.1980.189958
Filename
1481401
Link To Document