Title :
Basic properties of lateral MIS tunnel transistor
Author :
Ruzyllo, J. ; Stach, J.
Author_Institution :
The Pennsylvania State University, University Park, PA
Abstract :
The Lateral MIS Tunnel Transistor (LMISTT) is a transistor structure which exploits the combined properties of lateral MIS tunnel structures and non-equilibrium MIS tunnel diodes. Due to its features the LMISTT offers possibilities in a variety of applications including very large scale integrated high speed IC´s. In this work the various aspects of design and processing of this device are discussed in relation to its basic properties and performance.
Keywords :
Application specific integrated circuits; Electrons; Isolation technology; Light emitting diodes; Process design; Silicon; Solid state circuits; Substrates; Thin film transistors; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189958
