Title :
Self-aligned npn bipolar transistors
Author :
Ning, T.H. ; Isaac, R.D. ; Solomon, P.M. ; Tang, D.D. ; Yu, H.N.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, New York
Keywords :
Bipolar transistors; Degradation; Delay; Doping profiles; Impedance; Ion implantation; Isolation technology; Parasitic capacitance; Ring oscillators; Switching circuits;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189964