DocumentCode :
3555350
Title :
Self-aligned npn bipolar transistors
Author :
Ning, T.H. ; Isaac, R.D. ; Solomon, P.M. ; Tang, D.D. ; Yu, H.N.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, New York
Volume :
26
fYear :
1980
fDate :
1980
Firstpage :
823
Lastpage :
824
Keywords :
Bipolar transistors; Degradation; Delay; Doping profiles; Impedance; Ion implantation; Isolation technology; Parasitic capacitance; Ring oscillators; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1980 International
Type :
conf
DOI :
10.1109/IEDM.1980.189964
Filename :
1481407
Link To Document :
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