DocumentCode :
3555351
Title :
A microwave silicon power MOSFET
Author :
Okabe, T. ; Nagata, M. ; Itoh, H.
Author_Institution :
Hitachi, Ltd., Tokyo, Japan
Volume :
26
fYear :
1980
fDate :
1980
Firstpage :
825
Lastpage :
825
Keywords :
Bipolar transistors; Frequency; Laboratories; MOSFET circuits; Microwave devices; Power MOSFET; Power amplifiers; Power generation; Silicon; Solid state circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1980 International
Type :
conf
DOI :
10.1109/IEDM.1980.189965
Filename :
1481408
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3555351
بازگشت