DocumentCode :
3555356
Title :
A new conduction model for polycrystalline silicon films
Author :
Lu, N.C.C. ; Gerzberg, L. ; Lu, C.Y. ; Meindl, J.D.
Author_Institution :
Stanford University, Stanford, California
Volume :
26
fYear :
1980
fDate :
1980
Firstpage :
833
Lastpage :
834
Keywords :
Conductive films; Doping; Electrical resistance measurement; Scattering; Semiconductor films; Semiconductor process modeling; Silicon; Tellurium; Temperature distribution; Thermionic emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1980 International
Type :
conf
DOI :
10.1109/IEDM.1980.189969
Filename :
1481412
Link To Document :
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