• DocumentCode
    3555365
  • Title

    Lateral epitaxy by seeded solidification for growth of single-crystal Si films on insulators

  • Author

    Fan, John C C ; Geis, M.W. ; Tsaur, Bor-Yeu

  • Author_Institution
    Massachusetts Institute of Technology, Lexington, Massachusetts
  • Volume
    26
  • fYear
    1980
  • fDate
    1980
  • Firstpage
    845
  • Lastpage
    845
  • Keywords
    Amorphous materials; Epitaxial growth; Government; Insulation; Laboratories; Semiconductor films; Strips; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1980 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1980.189977
  • Filename
    1481420