Title :
Lateral epitaxy by seeded solidification for growth of single-crystal Si films on insulators
Author :
Fan, John C C ; Geis, M.W. ; Tsaur, Bor-Yeu
Author_Institution :
Massachusetts Institute of Technology, Lexington, Massachusetts
Keywords :
Amorphous materials; Epitaxial growth; Government; Insulation; Laboratories; Semiconductor films; Strips; Substrates;
Conference_Titel :
Electron Devices Meeting, 1980 International
DOI :
10.1109/IEDM.1980.189977
