DocumentCode
3555367
Title
Threshold behaviour of conductivity in polycrystalline semiconductor thin film transistors
Author
Levinson, J. ; Scanlon, P.J. ; Shepherd, F.R. ; Westwood, W.D.
Author_Institution
Soreq Nuclear Research Center, Yavne, Israel
Volume
26
fYear
1980
fDate
1980
Firstpage
847
Lastpage
847
Keywords
Annealing; Chromium; Grain boundaries; Plasma density; Plasma devices; Semiconductor device doping; Semiconductor process modeling; Semiconductor thin films; Thermal conductivity; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1980 International
Type
conf
DOI
10.1109/IEDM.1980.189979
Filename
1481422
Link To Document