Title :
Non volatile semiconductor memories
Author :
Frohman-Bentchkowsky, Dov
Author_Institution :
Intel Israel/The Hebrew University of Jerusalem, Jerusalem, Israel
Abstract :
This paper reviews progress in the development of nonvolatile semiconductor memories todate. A comparison of basic device concepts, charge transfer mechanisms and regions of charge transport provides the basis for projection of future trends and limitations, with emphasis on difficulties in research, development and product implementation of new device concepts. Attention is focused on non destructive Program/Erase (P/E) semiconductor devices.
Keywords :
Charge transfer; Costs; Dielectric devices; Dielectric substrates; EPROM; MOS devices; Nonvolatile memory; Random access memory; Semiconductor memory; Silicon;
Conference_Titel :
Electron Devices Meeting, 1981 International
DOI :
10.1109/IEDM.1981.189986
