• DocumentCode
    3555425
  • Title

    Session 2 Integrated circuits — MOS Memory

  • Author

    Baertsch, R.D. ; Fu, H.S.

  • Author_Institution
    General Electric Corporation, Schenectady, NY, USA
  • fYear
    1981
  • fDate
    7-9 Dec. 1981
  • Firstpage
    19
  • Lastpage
    19
  • Abstract
    Start of the above-titled section of the conference proceedings.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1981 International
  • Conference_Location
    Washington, DC, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1981.189987
  • Filename
    1481940
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555425