A high performance silicon-on-sapphire electrically erasable PROM

We describe a SOS non volatile memory device with fast electrical programming and erasing capability. Quasi-uniform hot electron injection is used for both writing and erasing. The device is based on a pseudo-double-stacked gate structure with a floating SOS substrate. Experimental results are presented for a tentative device made with standard test components. Writing is performed by pulses of + 20 and - 20 V, 100 s. Erasing requires a 1 MHz pulse train of + 22 V, 10 ms. The device operation is modelized using the "lucky electron" model.